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PD -94424A
AUTOMOTIVE MOSFET
Typical Applications
IRF3007
HEXFET(R) Power MOSFET
D
42 Volts Automotive Electrical Systems Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Automotive [Q101] Qualified
Features

VDSS = 75V
G S
RDS(on) = 0.0126 ID = 75A
Description
Specifically designed for Automotive applications, this design of HEXFET(R) Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C ID @ TC = 25C IDM PD @TC = 25C VGS EAS EAS (6 sigma) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon limited) Continuous Drain Current, VGS @ 10V (See Fig.9) Continuous Drain Current, VGS @ 10V (Package limited) Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw
Max.
80 56 75 320 200 1.3 20 280 946 See Fig.12a, 12b, 15, 16 -55 to + 175
Units
A
W W/C V mJ A mJ C
300 (1.6mm from case ) 1.1 (10)
N*m (lbf*in)
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
--- 0.50 ---
Max.
0.74 --- 62
Units
C/W
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1
9/16/02
IRF3007
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff.
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
Min. 75 --- --- 2.0 180 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- 0.084 10.5 --- --- --- --- --- --- 89 21 30 12 80 55 49 4.5 7.5 3270 520 78 3500 340 640
Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 12.6 m VGS = 10V, ID = 48A 4.0 V VDS = 10V, ID = 250A --- S VDS = 25V, ID = 48A 20 VDS = 75V, VGS = 0V A 250 VDS = 60V, VGS = 0V, TJ = 150C 200 VGS = 20V nA -200 VGS = -20V 130 ID = 48A 32 nC VDS = 60V 45 VGS = 10V --- VDD = 38V --- ID = 48A ns --- RG = 4.6 --- VGS = 10V D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact S --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 60V, = 1.0MHz --- VGS = 0V, VDS = 0V to 60V
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr ton Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol --- --- 80 showing the A G integral reverse --- --- 320 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 48A, VGS = 0V --- 85 130 ns TJ = 25C, IF = 48A, VDD = 38V --- 280 420 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by
Coss eff. is a fixed capacitance that gives the same charging time max. junction temperature. (See fig. 11). as Coss while VDS is rising from 0 to 80% VDSS . Starting TJ = 25C, L = 0.24mH Limited by T Jmax , see Fig.12a, 12b, 15, 16 for typical repetitive R G = 25, IAS = 48A, VGS=10V (See Figure 12). avalanche performance. ISD 48A, di/dt 330A/s, VDD V(BR)DSS, This value determined from sample failure population. 100% TJ 175C tested to this value in production. Pulse width 400s; duty cycle 2%.
2
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IRF3007
1000
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
1000
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
100
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
4.5V
10
10
4.5V 20s PULSE WIDTH Tj = 25C
1 0.1 1 10 100
20s PULSE WIDTH Tj = 175C
1 0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current ( A)
T J = 175C 80
100
T J = 175C
60 T J = 25C 40
10
T J = 25C
20 VDS = 25V 20s PULSE WIDTH 0 0 40 80 120 160
1 4.0 5.0 6.0
VDS = 25V 20s PULSE WIDTH
7.0 8.0 9.0
VGS , Gate-to-Source Voltage (V)
ID, Drain-to-Source Current (A)
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance Vs. Drain Current
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IRF3007
6000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd , C ds SHORTED Crss Coss = Cgd = C + Cgd ds
20 ID= 48A
VGS , Gate-to-Source Voltage (V)
5000
16
VDS= 60V VDS= 38V VDS= 15V
C, Capacitance (pF)
4000
12
Ciss
3000
8
2000
4
1000
0 1 10
Coss Crss
100
0 0 40 80 120 160 Q G Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000.0
10000 OPERATION IN THIS AREA LIMITED BY RDS(on)
ISD, Reverse Drain Current (A)
ID, Drain-to-Source Current (A)
1000
100.0 TJ = 175C 10.0
100 100sec 10 1msec 1 10msec
1.0 T J = 25C 0.1 0.2 0.4 0.6 0.8 1.0 1.2 VGS = 0V 1.4 1.6 1.8
0.1
Tc = 25C Tj = 175C Single Pulse 1 10
100
1000
VSD, Source-toDrain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRF3007
80
3.0
I D = 80A
LIMITED BY PACKAGE
2.5
RDS(on) , Drain-to-Source On Resistance
60
ID , Drain Current (A)
2.0
40
(Normalized)
1.5
1.0
20
0.5
0 25 50 75 100 125 150 175
V GS = 10V
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
TC , Case Temperature
( C)
TJ, Junction Temperature
( C)
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10. Normalized On-Resistance Vs. Temperature
1
(Z thJC )
D = 0.50
0.20
Thermal Response
0.1
0.10 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = 2. Peak T t1/ t 2 +T C 0.1
0.05
0.02 0.01
J = P DM x Z thJC
0.01 0.00001
0.0001
0.001
0.01
t 1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRF3007
600
15V
ID TOP
500
EAS , Single Pulse Avalanche Energy (mJ)
VDS
L
DRIVER
400
BOTTOM
20A 34A 48A
RG
20V VGS
D.U.T
IAS tp
+ V - DD
A
300
0.01
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS tp
200
100
0 25 50 75 100 125 150 175
Starting T , J Junction Temperature
( C)
I AS
Fig 12b. Unclamped Inductive Waveforms
QG
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
10 V
QGS VG QGD
-VGS(th) Gate threshold Voltage (V)
4.0
ID = 250A
3.0
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator Same Type as D.U.T.
2.0
50K 12V .2F .3F
D.U.T. VGS
3mA
+ V - DS
1.0 -75 -50 -25 0 25 50 75 100 125 150 175
T J , Temperature ( C )
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 14. Threshold Voltage Vs. Temperature
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IRF3007
1000
Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax
Avalanche Current (A)
100
0.01 0.05
10
0.10
1
0.1 1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
300
EAR , Avalanche Energy (mJ)
T OP Single Pulse BOTT OM 50% Duty Cycle ID = 48A
200
100
0 25 50 75 100 125 150
Starting TJ , Junction Temperature (C)
Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. 175 D = Duty cycle in avalanche = tav *f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav
Fig 16. Maximum Avalanche Energy Vs. Temperature
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IRF3007
D.U.T
Driver Gate Drive P.W. Period VGS=10V
+
P.W.
Period
D=
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
+
RG
* * * * dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
RD
V DS VGS RG 10V
Pulse Width 1 s Duty Factor 0.1 %
D.U.T.
+
-VDD
Fig 18a. Switching Time Test Circuit
VDS 90%
10% VGS
td(on) tr t d(off) tf
Fig 18b. Switching Time Waveforms
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IRF3007
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048)
4 15.24 (.600) 14.84 (.584)
1.15 (.045) MIN 1 2 3
LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN
14.09 (.555) 13.47 (.530)
4.06 (.160) 3.55 (.140)
3X 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES:
0.93 (.037) 0.69 (.027) M BAM
3X
0.55 (.022) 0.46 (.018)
0.36 (.014)
2.92 (.115) 2.64 (.104)
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
EXAMPLE: T HIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 1997 IN T HE AS S EMBLY LINE "C" INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER
DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C
TO-220AB package is not recommended for Surface Mount Application Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 9/02
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